Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN
- 25 November 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 12 (49), 55460-55466
- https://doi.org/10.1021/acsami.0c16850
Abstract
Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of grown three-dimensional (3D) GaN-based devices. To date, there have been no studies of factors that lead to or prevent lift-off and/or spontaneous delamination of layers. Here, we report a unique approach of controlling the adhesion of this layered material, which can result in both desired lift-off layered h-BN and mechanically inseparable robust h-BN layers. This is accomplished by controlling the diffusion of Al atoms into h-BN from AlN buffers grown on h-BN/sapphire. We present evidence of Al diffusion into h-BN for AlN buffers grown at high temperatures compared to conventional-temperature AlN buffers. Further evidence that the Al content in BN controls lift-off is provided by comparison of two alloys, Al0.03B0.97N/sapphire and Al0.17B0.83N/sapphire. Moreover, we tested that management of Al diffusion controls the mechanical adhesion of high-electron-mobility transistor (HEMT) devices grown on AlN/h-BN/sapphire. The results extend the control of two-dimensional (2D)/3D hetero-epitaxy and bring h-BN closer to industrial application in optoelectronics.Funding Information
- Agence Nationale de la Recherche
This publication has 35 references indexed in Scilit:
- Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BNApplied Physics Letters, 2014
- Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial grapheneNature Communications, 2014
- Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric DiffusionJapanese Journal of Applied Physics, 2013
- Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphireJournal of Crystal Growth, 2012
- Layered boron nitride as a release layer for mechanical transfer of GaN-based devicesNature, 2012
- Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPEJournal of Crystal Growth, 2008
- Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of SapphireApplied Physics Express, 2008
- SIMS analysis of impurities and nitrogen isotopes in gallium nitride thin filmsApplied Surface Science, 2006
- Substrates for gallium nitride epitaxyMaterials Science and Engineering: R: Reports, 2002
- Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced LiftoffJapanese Journal of Applied Physics, 1999