Thermal mismatch induced stress characterization by dynamic resonance based on diamond MEMS
- 3 March 2021
- journal article
- research article
- Published by IOP Publishing in Applied Physics Express
- Vol. 14 (4), 045501
- https://doi.org/10.35848/1882-0786/abe7b0
Abstract
We report on the precise measurement of the thermal mismatch induced stress by dynamic resonance method. The metallic electrodes are deposited on a single-crystal diamond microelectromechanical resonator for the Joule heating and stress generation. The results show that the resonance frequency is linearly dependent on the induced stress. The stress resolution in this work is as precise as $10^4$ Pa, which is three orders of magnitude better than those obtained by Raman and X-ray diffraction methods.
Keywords
Funding Information
- JST-PRESTO (JPMJPR19I7)
- China Scholarship Council (201904890013)
- National Key Research Development Program of China (2016YFA0301200)
- National Natural Science Foundation of China (62074091)
- BAQIS Research Program (Y18G27)
- JSPS KAKENHI (26220903)
This publication has 41 references indexed in Scilit:
- The impact of residual stress on resonating piezoelectric devicesMaterials & Design, 2020
- Effect of growth and residual stress in AlN (0002) thin films on MEMS accelerometer designJournal of Materials Science: Materials in Electronics, 2020
- Preferentially aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on Si substrates via 3C-SiC intermediate layersApplied Physics Express, 2018
- Local stress distribution of dislocations in homoepitaxial chemical vapor deposite single-crystal diamondDiamond and Related Materials, 2012
- Growth and properties of semi-polar GaN on a patterned silicon substrateJournal of Crystal Growth, 2009
- Anelastic Stress Relaxation in Gold Films and Its Impact on Restoring Forces in MEMS DevicesJournal of Microelectromechanical Systems, 2009
- A new in situ residual stress measurement method for a MEMS thin fixed-fixed beam structureJournal of Microelectromechanical Systems, 2002
- Modification of curvature-based thin-film residual stress measurement for MEMS applicationsJournal of Micromechanics and Microengineering, 2002
- Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor depositionJournal of Applied Physics, 1998
- Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layersApplied Physics Letters, 1995