High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes
- 23 February 2021
- journal article
- research article
- Published by IOP Publishing in Applied Physics Express
- Vol. 14 (3), 035505
- https://doi.org/10.35848/1882-0786/abe522
Abstract
Thermal cycle annealing (TCA) is introduced to accelerate the dislocation annihilation in sputter-deposited AlN films on sapphire. Compared with constant temperature annealing, AlN films processed by TCA showed lower dislocation densities, smoother surface morphology, and fewer defects generated from the AlN/sapphire interface. After optimizing the film thickness, AlN films with a thickness of 800 nm, and X-ray rocking curve full widths at half maximum of 10–20 arcsec (0002) and 80–90 arcsec (10-12) were demonstrated, providing a simple and low-cost way to prepare high-quality AlN/sapphire templates for high-performance ultraviolet light-emitting diodes.Keywords
Funding Information
- JSPS KAKENHI (JP16H06415)
- MEXT under the “Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society”
- MEXT under the “Program for Building Regional Innovation Ecosystems”
- JST CREST (16815710)
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