A possible origin of the large leakage current in ferroelectric Al1−x Sc x N films
- 25 February 2021
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 60 (3), 030907
- https://doi.org/10.35848/1347-4065/abe644
Abstract
Leakage current analysis on 50-nm-thick ferroelectric Al0.78Sc0.22N films with TiN electrode has been performed. The electron conduction followed Schottky emission with an initial Schottky barrier height of 0.46 eV. During the initial switching, a gradual shift in the leakage current was observed, changing the Schottky barrier height to 0.36 eV, and stayed constant for further switching cycles. The formation of a tunneling barrier due to the formation of nitrogen vacancies at the metal interface can be deduced from the extraction of the Richardson constant.Keywords
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