Charge transport mechanism in the forming-free memristor based on silicon nitride
Open Access
- 28 January 2021
- journal article
- research article
- Published by Springer Science and Business Media LLC in Scientific Reports
- Vol. 11 (1), 1-10
- https://doi.org/10.1038/s41598-021-82159-7
Abstract
Nonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.Funding Information
- Russian Science Foundation (18-49-08001)
- Russian Foundation for Basic Research (19-29-03018)
- Ministry of Science and Technology, Taiwan (107-2923-E-009-001-MY3)
This publication has 64 references indexed in Scilit:
- Characterization of electroforming-free titanium dioxide memristorsBeilstein Journal of Nanotechnology, 2013
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance MemristorAdvanced Materials, 2011
- Two-bands charge transport in silicon nitride due to phonon-assisted trap ionizationJournal of Applied Physics, 2004
- A new low voltage fast SONOS memory with high-k dielectricSolid-State Electronics, 2003
- Thermally assisted hole tunneling at theinterface and the energy-band diagram of metal-nitride-oxide-semiconductor structuresPhysical Review B, 1998
- Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductorPhysical Review B, 1982
- Percolation theory and conductivity of strongly inhomogeneous mediaUspekhi Fizicheskih Nauk, 1975
- Switching phenomena in titanium oxide thin filmsSolid-State Electronics, 1968
- Mechanisms of space-charge-limited current in solidsSolid-State Electronics, 1961
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938