Quasi-ballistic transport model for nanoscale MOSFETs: learnings from a diffusive conductor

Abstract

The fundamental understanding of transport in ballistic transistors is an important area of research since modern transistors have channel lengths that approach the mean scattering length of carriers. Here, we provide a systematic approach to developing a quasi-ballistic transport model of highly scaled transistors, with only a few fitting parameters. These parameters are physical and follow naturally from the underlying physics of transport in ballistic conductors. Beginning with the band diagram of a diffusive conductor, we show how the number of fitting parameters evolves for describing a quasi-ballistic transistor. To support our model, we benchmark it against a wide range of nanoscale transistors.