Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays
- 8 August 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nano Research
- Vol. 13 (11), 3033-3040
- https://doi.org/10.1007/s12274-020-2968-5
Abstract
No abstract availableThis publication has 48 references indexed in Scilit:
- Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer DepositionThe Journal of Physical Chemistry C, 2011
- The metal-induced crystallization of poly-Si and the mobility enhancement of thin film transistors fabricated on a glass substrateMicroelectronic Engineering, 2010
- Fully Flexible Solution‐Deposited ZnO Thin‐Film TransistorsAdvanced Materials, 2010
- Encapsulation of Zinc Tin Oxide Based Thin Film TransistorsThe Journal of Physical Chemistry C, 2009
- Inkjet printed high-mobility indium zinc tin oxide thin film transistorsJournal of Materials Chemistry, 2009
- Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperaturesSemiconductor Science and Technology, 2009
- Stable ZnO thin film transistors by fast open air atomic layer depositionApplied Physics Letters, 2008
- Transparent ZnO-TFT Arrays Fabricated by Atomic Layer DepositionElectrochemical and Solid-State Letters, 2008
- Novel top‐gate zinc oxide thin‐film transistors (ZnO TFTs) for AMLCDsJournal of the Society for Information Display, 2007
- A comprehensive review of ZnO materials and devicesJournal of Applied Physics, 2005