ACS Applied Electronic Materials

Journal Information
ISSN / EISSN : 2637-6113 / 2637-6113
Published by: American Chemical Society (ACS) (10.1021)
Total articles ≅ 1,325
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Xixi Jiang, Xiaobing Hu, Jihong Bian, , , , , David Wei Zhang
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00492

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Zhaowei Zhang, Xiaosong Zhang, Lan Li, , Hao Yin, Xiaokai Gong, Rukun Ding, Yueming Zhang, Chao Li
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00685

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, Mari Mizutani, Kenta Matsuura, Masataka Imura, Hidenobu Murata, ,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00754

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Peter Krebsbach, Stefan Schlisske, Noah Strobel, Mervin Seiberlich, Luis A. Ruiz-Preciado, Christian Rainer, Xiaokun Huang, ,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00760

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Tingfeng Song, Huan Tan, , , Ignasi Fina,
ACS Applied Electronic Materials; https://doi.org/10.1021/acsaelm.1c00672

Abstract:
Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm2. The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 1010 cycles is obtained in 5 at. % La-doped films.
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