Refine Search

New Search

Results: 3

(searched for: doi:10.1109/ted.2021.3057028)
Save to Scifeed
Page of 1
Articles per Page
by
Show export options
  Select all
Naheem Olakunle Adesina, Baorui Wang, William Morell, Azmot Ullah Khan
Abstract:
This work presents a fast, low power and simple structure noise-based true random number generator (TRNG) using discrete components and devices such as resistor., capacitor, diode., transistor., operational amplifier etc. Two NPN 2N3904 BJT transistors are employed in the noise-source circuit whereby the collector terminal of one transistor is unconnected. A high electric field is induced by reverse biasing the emitter-base junction under high voltage. Current is injected into the base which lowers the noise voltage at the output node and then removes the transistor from breakdown region. Another random pulse also puts the transistor back into breakdown and the cycle continues. Subsequently, the noise signal generated is amplified by two LM741 op-amp each with a gain of 100. We employed 4007 series as digitizer to convert the amplified noise to digital pulses. The post processing technique is implemented with XOR operation., and the result shows the output data generated by TRNG pass all NIST SP800-22 tests.
Sebastian Matias Pazos, Wenwen Zheng, , , Thales Becker, Yaqing Shen, Kaichen Zhu, Yue Yuan, Gilson Wirth, Francesco Maria Puglisi, et al.
Published: 29 December 2022
Journal: Nanoscale
Nanoscale, Volume 15, pp 2171-2180; https://doi.org/10.1039/d2nr06222d

Abstract:
A 2D hexagonal boron nitride (h-BN) memristor with inkjet-printed silver electrodes is fabricated for ultra-stable random telegraph noise and connected to a custom, low-cost true random number generator fabricated using commercial components.
Yu-Hsuan Lin, Dai-Ying Lee, Ming-Hsiu Lee, Po-Hao Tseng, Wei-Chen Chen, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Published: 1 May 2022
Japanese Journal of Applied Physics, Volume 61; https://doi.org/10.35848/1347-4065/ac3a8d

Abstract:
A self-reference resistive random-access memory (ReRAM)-based one-transistor, two-ReRAM (1T2R) physically unclonable function (PUF) is proposed to provide a hardware security feature for electrical products in the IoT/5G era. There are four advantages from the proposed structure: (1) a small cell size; (2) intrinsic randomness; (3) no programming circuit; and (4) no data retention concerns. The conduction mechanism, temperature dependency, and read fluctuation of the pristine ReRAM device are studied. An information–address separation scheme is proposed which not only reduces the impact of the read noise and the temperature effect, but also improves system integrity against hardware attacks. The proposed 1T2R PUF unit also has great potential for use as a random seed for linear-feedback shift registers in pseudo random number generators with high unpredictability, good randomness, and a high data rate.
Page of 1
Articles per Page
by
Show export options
  Select all
Back to Top Top