Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth
Open Access
- 12 January 2016
- journal article
- research article
- Published by Hindawi Limited in Journal of Spectroscopy
- Vol. 2016, 1-14
- https://doi.org/10.1155/2016/1617063
Abstract
Presented work focuses the attention on two regions of MOS structure placed in the vicinity of the semiconductor/dielectric interface, in particular: on part of dielectric layer and thin layer of the substrate. In the presented work the application of absorption as a tool that can vary the absorption depth of excitation light into the semiconductor substrate is discussed. The changes of the absorption depth of visible light allows to obtain Raman signal from places in the substrate placed at different distances from the dielectric/semiconductor interface. The series of Raman spectra obtained from visible excitation in the case of varying absorption depth allowed to analyze the structure of the substrate as a function of distance from the interface. Deep ultraviolet Raman study regarding part of silicon dioxide layer placed directly at the interface is not discussed so far which makes the analysis of the structure of this part of dielectric layer possible. Comparison of reported in this work Raman data with structure of silicon/silicon dioxide interface obtained from other experimental techniques proves the applicability of proposed methodology.Keywords
This publication has 54 references indexed in Scilit:
- Improved model of optical phonon confinement in silicon nanocrystalsJournal of Experimental and Theoretical Physics, 2013
- Determination of channel temperature for AlGaN/GaN HEMTs by high spectral resolution micro-Raman spectroscopyJournal of Semiconductors, 2012
- Direct Formation of Mesoporous Coesite Single Crystals from Periodic Mesoporous Silica at Extreme PressureAngewandte Chemie, 2010
- Micro-Raman Temperature Measurements for Electric Field Assessment in Active AlGaN–GaN HFETsIEEE Electron Device Letters, 2004
- Raman-spectroscopic determination of inhomogeneous stress in submicron silicon devicesApplied Physics Letters, 2003
- High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopyApplied Physics Letters, 2000
- Optical characterization of layers for silicon microelectronicsMicroelectronic Engineering, 1998
- Study of the interfacial structure between Si (100) and thermally grown SiO2 using a ball-and-spoke modelJournal of Applied Physics, 1987
- Pyroelectricity in Oriented PolytrifluoroethyleneJapanese Journal of Applied Physics, 1985
- Characteristic electronic defects at the Si-SiO2 interfaceApplied Physics Letters, 1983