Effect of Ta doping on the properties of β-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates
- 29 January 2021
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Science: Materials in Electronics
- Vol. 32 (3), 2757-2764
- https://doi.org/10.1007/s10854-020-05015-w
Abstract
No abstract availableKeywords
Funding Information
- Key Technology Research and Development Program of Shandong (2018GGX102024)
- National Natural Science Foundation of China (61874067)
- Natural Science Foundation of Shandong Province (ZR2019MF042)
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