Zinc selenide films of variable composition have been synthesized electrochemically under different conditions of deposition potential, time interval, pH and concentration of electroplating solution to identify the optimal condition under which films of higher photoactivity and substantial stability may be produced. The deposited films have been characterized on the basis their photoresponse, corrosion and capacitance behavior. The band gap values determined by photoaction spectral studies show that these values are almost independent to the concentration of electroplating solution and deposition potential applied. The capacitance studies, photoactivity data in combination to current voltage behaviour in the dark and under illumination show that the deposited zinc selenide films exhibit p-type semiconductivity.