Detailed study on effects of gate voltage, frequency and temperature on dielectric properties of Cu/PAr/n-CdS/SnO2 MIS Schottky diode

Abstract

In this paper, CdS based hybrid diode was fabricated by using the Polyarylate (PAr) film as insulator dielectric on transparent conductive glass substrate. The dielectric parameters such as dielectric constant (ε'), loss (ε), loss tangent (tanδ), ac conductivity (σ_AC ) and complex modulus (M', M") of the hybrid Schottky diode were examined as the function of signal frequency, gate voltage and temperature. The detailed analysis indicated that the interface states at the CdS/PAr interface and its behaviour in the examined frequency range. Corresponding to each other, the value of angular frequency exponent (S) and the temperature dependence of σac indicates the hopping mechanism which agrees to CBH model. The barrier height between the neighbour states is determined as 47 meV at the studied temperature range. Temperature dependence of ∆VFB verifies the thermally active behaviour of interface states which decreases from 117 meV to 41 meV with increasing temperature.