Highly efficient UV detection in a metal–semiconductor–metal detector with epigraphene
Open Access
- 9 May 2022
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 120 (19), 191101
- https://doi.org/10.1063/5.0090219
Abstract
We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal–semiconductor–metal (MSM) detectors with a peak external quantum efficiency of η ∼ 85% for wavelengths λ = 250–280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼ 50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications.Funding Information
- Stiftelsen för Strategisk Forskning (GMT14-0077)
- Stiftelsen för Strategisk Forskning (RMA15-0024)
- VINNOVA (2019-00068)
- Nanoscience and Nanotechnology Area of Advance, Chalmers Tekniska Högskola
This publication has 39 references indexed in Scilit:
- Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum TransportNano Letters, 2013
- Engineering and metrology of epitaxial grapheneSolid State Communications, 2011
- Towards a quantum resistance standard based on epitaxial grapheneNature Nanotechnology, 2010
- Homogeneous large-area graphene layer growth on-SiC(0001)Physical Review B, 2008
- Vertical PIN ultraviolet photodetectors based on 4H‐SiC homoepilayersphysica status solidi (c), 2007
- The Need for Ultraviolet to Understand the Chemical Evolution of the Universe and Cosmology.Astrophysics and Space Science, 2006
- Wide-bandgap semiconductor ultraviolet photodetectorsSemiconductor Science and Technology, 2003
- Silicon carbide UV photodiodesIEEE Transactions on Electron Devices, 1993
- Detection of ultraviolet radiation using silicon carbide p-n junctionsSolid-State Electronics, 1967
- Proposal of the Detectivity D** for Detectors Limited by Radiation Noise†Journal of the Optical Society of America, 1960