First principles design of Ohmic spin diodes based on quaternary Heusler compounds
- 1 February 2021
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 118 (5), 052405
- https://doi.org/10.1063/5.0037085
Abstract
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the nonequilibrium Green's function method, we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current–voltage (I–V) characteristics with zero threshold voltage VT. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between 30 and 105. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds.Keywords
Funding Information
- European Union (ZS/2016/06/79307)
- Deutsche Forschungsgemeinschaft (CRC/SFB 227)
This publication has 29 references indexed in Scilit:
- Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistorsPhysical Review Materials, 2019
- High-throughput screening for spin-gapless semiconductors in quaternary Heusler compoundsPhysical Review Materials, 2019
- Spin-filter and spin-gapless semiconductors: The case of Heusler compoundsAIP Advances, 2016
- Slater-Pauling behavior in LiMgPdSn-type multifunctional quaternary Heusler materials: Half-metallicity, spin-gapless and magnetic semiconductorsJournal of Applied Physics, 2013
- Realization of Spin Gapless Semiconductors: The Heusler CompoundPhysical Review Letters, 2013
- Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctionsApplied Physics Letters, 2009
- Proposal for a New Class of Materials: Spin Gapless SemiconductorsPhysical Review Letters, 2008
- Giant tunneling magnetoresistance in Co2MnSi∕Al–O∕Co2MnSi magnetic tunnel junctionsApplied Physics Letters, 2006
- Co 2 Mn Si Heusler alloy as magnetic electrodes in magnetic tunnel junctionsApplied Physics Letters, 2004
- New Class of Materials: Half-Metallic FerromagnetsPhysical Review Letters, 1983