Electroresistance effect in MoS2-Hf0.5Zr0.5O2 heterojunctions
- 22 February 2021
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 118 (8), 083106
- https://doi.org/10.1063/5.0035306
Abstract
Pairing two-dimensional semiconductors with ferroelectric films may allow for the development of hybrid electronic devices that would not only exhibit a combination of the functional properties of both material groups but would also reveal unusual characteristics emerging from coupling between these properties. Here, we report the observation of a considerable (up to 103 at 0.8 V read bias) polarization-mediated tunneling electroresistance (TER) effect in Hf0.5Zr0.5O2 (HZO) ferroelectric tunnel junctions (FTJs) employing MoS2 as one of the electrodes. It was found that for this type of hybrid FTJs, a change in resistance upon polarization reversal could be described by Fowler–Nordheim tunneling. The underlying mechanism for the enhanced TER effect is a polarization-mediated accumulation or depletion of the majority carriers at the MoS2/HZO interface, which results in a change in the effective barrier shape seen by the tunneling electrons. Given the compatibility of HfO2-family ferroelectrics with CMOS technology and a possibility of large scale growth and transfer of MoS2 films, our results provide a pathway for fabrication of high-density nonvolatile memory and data storage systems based on hybrid FTJs.Funding Information
- National Science Foundation (DMR-1420645)
- National Science Foundation (ECCS-1917635)
- Russian Science Foundation (20-19-00370)
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