Resonance Raman spectroscopy in semiconducting transition-metal dichalcogenides: basic properties and perspectives
- 27 July 2020
- journal article
- review article
- Published by IOP Publishing in 2D Materials
- Vol. 7 (4), 042001
- https://doi.org/10.1088/2053-1583/ab98ef
Abstract
Raman spectroscopy is one of the most important optical techniques for the study of two-dimensional systems, providing fundamental information for the development of applications using these materials in optoelectronics and valleytronics. The emerging area of two-dimensional layered materials demands the characterization and understanding of the basic physical properties of the material under study and is indispensable to pave the way for the engineering of devices. In this review we cover the recent development of resonance Raman spectroscopy on transition metal dichalcogenides, discussing the exciton-phonon coupling and intervalley double-resonance Raman scattering process. A brief discussion of the effect of defects and disorder on the Raman spectra of these materials is also presented. The results of Raman spectroscopy in TMDs are compared to those observed in graphene, showing that this technique also provides physical information about TMDs that were previously reported in graphene systems. We also discuss the possible future perspectives and directions that the field may go to.Keywords
Funding Information
- Conselho Nacional de Desenvolvimento Científico e Tecnológico
- Brazilian Institute for Science and Technology of Carbon Nanomaterials
- Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
- Fundação de Amparo à Pesquisa do Estado de Minas Gerais
This publication has 128 references indexed in Scilit:
- Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenidesPhysical Review B, 2013
- Identification of individual and few layers of WS2 using Raman SpectroscopyScientific Reports, 2013
- Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakesApplied Physics Letters, 2012
- Magnetism in MoS2 induced by proton irradiationApplied Physics Letters, 2012
- Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3 NanoplateletsNano Letters, 2011
- Phonon softening and crystallographic orientation of strained graphene studied by Raman spectroscopyProceedings of the National Academy of Sciences of the United States of America, 2009
- Raman Spectrum of Graphene and Graphene LayersPhysical Review Letters, 2006
- Stokes and anti-Stokes double resonance Raman scattering in two-dimensional graphitePhysical Review B, 2002
- Impurity-induced resonant Raman scatteringPhysical Review B, 1992
- 1T-MoS2, a new metallic modification of molybdenum disulfideJournal of the Chemical Society, Chemical Communications, 1992