TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band
Open Access
- 25 June 2021
- journal article
- research article
- Published by MDPI AG in Electronics
- Vol. 10 (13), 1540
- https://doi.org/10.3390/electronics10131540
Abstract
In this paper, a new method for the parameter extraction of Schottky barrier diode (SBD) is presented to eliminate the influence of parasitic parameters on the intrinsic capacitance-voltage (C-V) characteristics of the Schottky diodes at high frequencies. The method is divided into the de-embedding and parameter extraction, including six auxiliary configurations and, is referred tos as Two-step Six-configuration Parameter Extraction Method (TSPEM). Compared to the traditional junction capacitance extraction method, this method can extract the value of junction capacitance at higher frequencies with higher accuracy. At the same time, compared to the other de-embedding methods, this method shows better performance in de-embedding the contributions of parasitic structures from the transmission line measurements. The intrinsic junction capacitances obtained by this method and the three-dimensional (3-D) electromagnetic model are combined to form a diode simulation model, which accurately characterizes the capacitance characteristics of the SBD. It was verified with a 200 GHz double frequency multiplier, and the simulation results and measurement results showed good consistency.Keywords
Funding Information
- National Natural Science Foundation of China (61871072)
This publication has 23 references indexed in Scilit:
- A 140 GHz high efficiency frequency doubler based on a physical‐based SDD model of SBDInternational Journal of Circuit Theory and Applications, 2021
- A 135-190 GHz Broadband Self-Biased Frequency Doubler using Four-Anode Schottky DiodesMicromachines, 2019
- Single-Stage Frequency Quadrupler With SBD and Four-Octave LPF at 335 GHzIEEE Transactions on Terahertz Science and Technology, 2017
- THz Diode Technology: Status, Prospects, and ApplicationsProceedings of the IEEE, 2017
- The 2017 terahertz science and technology roadmapJournal of Physics D: Applied Physics, 2017
- A 220 GHz frequency tripler based on 3D electromagnetic model of the schottky diode and the field-circuit co-simulation methodMicrowave and Optical Technology Letters, 2016
- Physics-Based Design and Optimization of Schottky Diode Frequency Multipliers for Terahertz ApplicationsIEEE Transactions on Microwave Theory and Techniques, 2010
- Opening the terahertz window with integrated diode circuitsIEEE Journal of Solid-State Circuits, 2005
- Terahertz technologyIEEE Transactions on Microwave Theory and Techniques, 2002
- Fixed-tuned submillimeter wavelength waveguide mixers using planar Schottky-barrier diodesIEEE Transactions on Microwave Theory and Techniques, 1997