Multiresponsive Nonvolatile Memories Based on Optically Switchable Ferroelectric Organic Field‐Effect Transistors

Abstract
Organic transistors are key elements for flexible, wearable, and biocompatible logic applications. Multiresponsivity is highly sought‐after in organic electronics to enable sophisticated operations and functions. Such a challenge can be pursued by integrating more components in a single device, each one responding to a specific external stimulus. Here, the first multiresponsive organic device based on a photochromic–ferroelectric organic field‐effect transistor, which is capable of operating as nonvolatile memory with 11 bit memory storage capacity in a single device, is reported. The memory elements can be written and erased independently by means of light or an electric field, with accurate control over the readout signal, excellent repeatability, fast response, and high retention time. Such a proof of concept paves the way toward enhanced functional complexity in optoelectronics via the interfacing of multiple components in a single device, in a fully integrated low‐cost technology compatible with flexible substrates.
Funding Information
  • European Research Council
  • China Sponsorship Council (ANR‐10‐LABX‐0026 CSC, ANR‐11‐LABX‐0058 NIE, ANR‐10‐IDEX‐0002‐02)
  • Centre International de Recherche aux Frontières de la Chimie
  • Institut Universitaire de France
  • Natural Sciences and Engineering Research Council of Canada
  • Deutsche Forschungsgemeinschaft (SFB 658, SFB 951)
  • Javna Agencija za Raziskovalno Dejavnost RS (P1‐0055)