Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy
- 12 January 2021
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 32 (15), 155601
- https://doi.org/10.1088/1361-6528/abdb16
Abstract
Controlled growth of In-rich InGaN nanowires/nanorods has long been considered as a very challenging task. Here, we present the first attempt to fabricate InGaN nanorods by selective area growth using HVPE (hydride vapor phase epitaxy). It is shown that InGaN nanorods with different indium contents up to 90 % can be grown by varying the In/Ga flow ratio. Furthermore, nanowires are observed on the surface of the grown nanorods with a density that is proportional to the Ga content. The impact of varying the NH3 partial pressure is investigated to suppress the growth of these nanowires. It is shown that the nanowire density is considerably reduced by increasing the NH3 content in the vapor phase. We attribute the emergence of the nanowires to the final step of growth occurring after stopping the NH3 flow and cooling down the substrate. This is supported by a theoretical model based on the calculation of the supersaturation of the ternary InGaN alloy in interaction with the vapor phase as a function of different parameters assessed at the end of growth. It is shown that the decomposition of the InGaN solid alloy indeed becomes favorable below a critical value of the NH3 partial pressure. The time needed to reach this value increases with increasing the input flow of NH3, and therefore the alloy decomposition leading to the formation of nanowires becomes less effective. These results should be useful for fundamental understanding of the growth of InGaN nanostructures and may help to control their morphology and chemical composition required for device applications.Keywords
Funding Information
- Agence Nationale de la Recherche (ANR-11-LABX-0014)
- Centre National de la Recherche Scientifique (PRC1300 CNRSJSPS)
- European Commission
- Russian Science Foundation (19-72-30004)
- Région Auvergne-Rhône-Alpes (ANR-10- LABX-16-01)
- Cap20-25
- French government IDEX-SITE initiative (16-μIDEX-0001)
This publication has 36 references indexed in Scilit:
- High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kineticsJournal of Applied Physics, 2014
- Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wellsOptics Express, 2011
- Metalorganic Vapor Phase Epitaxy of III-Nitride Light-Emitting Diodes on Nanopatterned AGOG Sapphire Substrate by Abbreviated Growth ModeIEEE Journal of Selected Topics in Quantum Electronics, 2009
- Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodesApplied Physics Letters, 2007
- Status and Future of High-Power Light-Emitting Diodes for Solid-State LightingJournal of Display Technology, 2007
- Microstructure and electronic properties of InGaN alloysPhysica Status Solidi (b), 2003
- Role of Dislocation in InGaN Phase SeparationJapanese Journal of Applied Physics, 1998
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996