Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials via Ga3+‐Doping for over 12% Efficient Solar Cells
- 16 February 2021
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 31 (16), 2010325
- https://doi.org/10.1002/adfm.202010325
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (61974086, 61722402, 91833302, 62074052, 61874159)
This publication has 70 references indexed in Scilit:
- Analysis of internal quantum efficiency in double-graded bandgap solar cells including sub-bandgap absorptionSolar Energy Materials and Solar Cells, 2011
- Solution-Based Synthesis and Characterization of Cu2ZnSnS4 NanocrystalsJournal of the American Chemical Society, 2009
- Electronic structure and stability of quaternary chalcogenide semiconductors derived from cation cross-substitution of II-VI andcompoundsPhysical Review B, 2009
- Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAsPhysical Review B, 2008
- Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopySolid-State Electronics, 2004
- Electronic properties of CuGaSe2-based heterojunction solar cells. Part II. Defect spectroscopyJournal of Applied Physics, 2000
- Projector augmented-wave methodPhysical Review B, 1994
- Soft self-consistent pseudopotentials in a generalized eigenvalue formalismPhysical Review B, 1990
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964