P-type doping in 2M-WS2 for a complete phase diagram
- 16 February 2021
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Dalton Transactions
- Vol. 50 (11), 3862-3866
- https://doi.org/10.1039/d0dt04313c
Abstract
2M-WS2 as a new phase of transition metal dichalcogenides possesses many novel physical properties, such as superconductivity and topological surface states. The effect of n-type doping on the superconductivity of this material has been studied. However, p-type doping has not been studied, because it is difficult to implement p-type doping in metastable 2M-WS2. In this paper, p-type doping was achieved in 2M-WS2 for the first time by using Mo. With the increase of the Mo content, the carrier concentration rises slightly from 1.42 × 1021 cm−1 to 1.56 × 1021 cm−1. Meanwhile, the superconducting transition temperature decreases monotonously with the increase of Mo doping and reaches a minimum value of 4.37 K at the doping limit of x = 0.6 in W1−xMoxS2. Combining the data of n-type doped 2M-WS2 from our previous research, we summarize the carrier concentration and superconducting transition temperature in a phase diagram, which shows a typical dome-like shape. These results uncover the relationship between the carrier concentration and electronic state of 2M-WS2.Keywords
Funding Information
- Chinese Academy of Sciences (QYZDJ-SSW-JSC013)
- Shanghai Institute of Ceramics, Chinese Academy of Sciences (KGZD-EW-T06, Y93ZC2120G, E01ZC1110G)
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