1/6 type diffraction patterns and double P-E hysteresis loops in Bi(Mg2/3Nb1/3)O3 modified NaNbO3 ceramics
- 8 April 2020
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 53 (30), 305302
- https://doi.org/10.1088/1361-6463/ab87c2
Abstract
To promote the development of NaNbO3-based antiferroelectrics, it is necessary to stabilize the antiferroelectric phase over ferroelectric phase through compositional design strategy. In this work, Bi(Mg2/3Nb1/3)O3 was doped into NaNbO3 for decreasing the Goldschmidt tolerance factor, and double P-E hysteresis loop was observed. Raman spectra showed the enhanced antiferroelectricity in Bi(Mg2/3Nb1/3)O3 doped samples, and 1/6(100) rather than the usually reported 1/4(100) diffraction spots were observed from selected area electron diffraction patterns. This work is helpful in promoting the researches of NaNbO3-based antiferroelectric systems.Funding Information
- Chinese Academy of Sciences President’s International Fellowship Initiative (2017VMA0018)
- Instrument Developing Project of Chinese Academy of Sciences (ZDKYYQ20180004)
- National Key R&D Program of China (2016YFA0201103, 2016YFB0402701)
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