Hole-transmission enhancement in 4H-silicon carbide light triggered thyristor for low loss *
- 27 November 2020
- journal article
- research article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 36 (2), 025010
- https://doi.org/10.1088/1361-6641/abce8b
Abstract
In this paper, a 20kV silicon carbide (SiC) light triggered thyristor (LTT) with n-type blocking base is simulated using Synopsys Sentaurus TCAD. In order to reduce the power dissipation, a method that enhances the hole-transmission through electric field induced by gradual doping profile in the n-buffer layer is proposed. The results indicate that the method enhancing the hole-transmission is effective in reducing the power loss of SiC LTT with n-type blocking base. By changing the doping profile of n-buffer layer from uniform to gradual, both on-state loss and switching loss are efficiently reduced. Compared to the conventional SiC LTT with 2.5μm thick n-buffer layer, when the doping gradient is 1.0×1021cm-4, the on-state and the switching losses of the hole-transmission enhanced SiC LTT are reduced by 34.7% and 17.9%, respectively.Keywords
Funding Information
- National Natural Science Foundation of China (62004161, 51677149)
- Natural Science Basic Research Plan in Shaanxi Province of China (2020JQ-636)
- Scientific Research Project of Education Department of Shaanxi Province of China (20JK0796)
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