A Temperature-Aware Large-Signal SPICE Model for Depletion-Type Silicon Ring Modulators
- 27 July 2021
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 33 (17), 947-950
- https://doi.org/10.1109/lpt.2021.3098760
Abstract
We present a large-signal SPICE model for the depletion-type silicon ring (RM) modulator that includes temperature dependence. The model is based on the temperature-dependent equivalent circuit for the RM and allows easy simulation of RM modulation characteristics in SPICE. The accuracy of the model is verified with the measurement results of 25-Gb/s NRZ modulation at several different temperatures. In addition, simulation of the temperature-dependent transient responses of the RM together with the RM temperature control circuit is demonstrated in the standard IC design environment.Keywords
Funding Information
- Materials and Parts Technology Research Development Program through the Korean Ministry of Trade, Industry, and Energy (10065666)
- National Research Foundation of Korea (NRF) Grant by the Korean Government through the Ministry of Science and ICT (2020R1A2C201508911)
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