Three-dimensional quasi-quantized Hall effect in bulk InAs

Abstract

The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect(QHE),exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials, consisting of stacks of weakly coupled 2D platelets. Yet, it is predicted that the quasi-quantized 3D version of the 2D QHE occurs in a much broader class of bulk materials, regardless of the underlying crystal structure. Here, we report the observation of quasi-quantized plateau-like features in the Hall conductivity of the n-type bulk semiconductor InAs. InAs takes form of a cubic crystal without any low-dimensional substructure. The onset of the plateau-like feature in the Hall conductivity scales with $\sqrt{2/3}k_{F}^{z}/\pi$ in units of the conductance quantum and is accompanied by a Shubnikov-de Haas minimum in the longitudinal resistivity, consistent with the predictions for 3D QQHE for parabolic electron band structures. Our results suggest that the 3D QQHE may be a generic effect directly observable in materials with small Fermi surfaces, placed in sufficiently strong magnetic fields.