Lateral AlGaN/GaN Schottky Barrier Diode With Arrayed p-GaN Islands Termination
- 15 October 2021
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (12), 6046-6051
- https://doi.org/10.1109/ted.2021.3118326
Abstract
A lateral Schottky barrier diode (SBD) on p-GaN/AlGaN/GaN heterostructure with arrayed p-GaN islands termination (API-SBD) is proposed and investigated in this work. On the basis of the unique design approach, API-SBD presents a reduced reverse leakage current ( $I_{{R}}$ ) with one order of magnitude lower than that of counterpart SBD with the only recessed anode (R-SBD). The turn-on voltage ( $V_{{on}}$ ) of API-SBD is nearly the same as that of R-SBD, which shows an effective improvement of the tradeoff between $V_{{on}}$ and $I_{{R}}$ . The breakdown voltage (BV) of API-SBD is obviously improved due to the introduction of p-GaN islands termination by shielding the high electric field from the Schottky junction. In addition, the capacitance of API-SBD is approximately a half of that of R-SBD. The fabricated API-SBD with a 15-μm anode-cathode distance exhibits a $V_{{on}}$ of ~0.59 V, an $I_{{R}}$ of ~10 nA/mm (at -100 V), and a BV of 1070 V (at 1 μA/mm). It is worth noting that the fabrication process of API-SBD is fully compatible with that of p-GaN HEMT, which is helpful for the monolithic integration.
Keywords
Funding Information
- Key Research and Development Program of Shaanxi (2020ZDLGY03-05)
- Key-Area Research and Development Program of Guangdong Province (2020B010174001)
- National Natural Science Foundation of China (61574112, 61974115)
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