Crystal Growth, Structural and Optical Studies of CuGa3Se5 Bulk Compounds
Open Access
- 1 January 2016
- journal article
- research article
- Published by Scientific Research Publishing, Inc. in World Journal of Condensed Matter Physics
- Vol. 06 (01), 27-34
- https://doi.org/10.4236/wjcmp.2016.61004
Abstract
Bulk materials were synthesized by the Bridgman technique using the elements Cu, Ga, Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity. Optical response (Photoconductivity) and Photoluminescence (PL) and PL-excitation (PLE) at temperatures from 4.2 to 77 K were also used to estimate the band-gap energy of Cu-Ga3Se5. They show a nearly perfect stoechiometry and present p-type conductivity. CuGa3Se5 either have an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained by Photoconductivity and Photoluminescence (PL) for the different samples is 1.85 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type. The defects that appear are probably GaCu.Keywords
This publication has 18 references indexed in Scilit:
- Crystal structure re-investigation in wide band gap CIGSe compoundsThin Solid Films, 2008
- Fundamental absorption edge in CuIn5Se8 and CuGa3Se5 single crystalsPhysica Status Solidi (a), 2006
- Optical properties of CuGa3Se5single crystalsJournal of Physics D: Applied Physics, 2006
- Ellipsometric spectroscopy on polycrystalline CuIn1–xGaxSe2: Identification of optical transitionsPhysica Status Solidi (a), 2005
- Structural, optical and electrical properties of the ordered vacancy compound CuIn3Se5 thin films fabricated by flash evaporationSolid State Communications, 2002
- Fabrication and study of photovoltaic material CuInxGa1−xSe2 bulk and thin films obtained by the technique of close-spaced vapor transportSolid State Communications, 2002
- Defect physics of thechalcopyrite semiconductorPhysical Review B, 1998
- Effect of Crystal Symmetry on Electronic Structures of CuInSe 2 and Related CompoundsJapanese Journal of Applied Physics, 1997
- Defect Chalcopyrite Cu(In1-x, Gax)3Se5 Polycrystalline Thin-Film MaterialsMRS Proceedings, 1996
- Temperature dependence of pair band luminescence in GaPJournal of Physics and Chemistry of Solids, 1965