Broadband InSb/Si heterojunction photodetector with graphene transparent electrode
- 31 July 2020
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 31 (31), 315204
- https://doi.org/10.1088/1361-6528/ab884c
Abstract
Silicon-based Schottky heterojunction photodetectors are promising due to their compatibility with the semiconductor process. However, the applications of these devices are usually limited to wavelengths shorter than 1.1 mu m due to the low absorption of electrode materials at infrared. In this report, silicon-based compound semiconductor heterojunction photodetectors with graphene transparent electrodes are fabricated. Due to the high absorption of InSb at infrared, as well as the good transparency and excellent electrical conductivity of the graphene, the as-prepared photodetectors show a broadband photoresponse with high performance which includes a specific detectivity of 1.9 x<i10(12) cm Hz(1/2) W-1, responsivity of 132 mA W-1, on/off ratio of 1 x<i10(5), rise time of 2 mu s, 3 dB cut-off frequency of 172 kHz, and response wavelengths covering 635 nm, 1.55 mu m and 2.7 mu m. This report proves that graphene as a transparent electrode has a great effect on the performance improvement of silicon-based compound semiconductor heterojunction photodetectors.Funding Information
- Youth Innovation Promotion Association of the Chinese Academy of Sciences (2015316, 2018416)
- Chongqing Science and Technology Commission (cstc2017zdcy-zdyfX0001, cstc2017zdcy-zdyfX0078, cs)
- National Natural Science Foundation of China (61705229)
This publication has 49 references indexed in Scilit:
- Progress in Infrared Photodetectors Since 2000Sensors, 2013
- Effects of rapid thermal annealing on the morphology and optical property of ultrathin InSb film deposited on SiO2/Si substrateChinese Physics B, 2013
- Photoelectrical Response in Single‐Layer Graphene TransistorsSmall, 2009
- High Quality InSb Films Grown on Si(111) Substrate via InSb Bi-Layere-Journal of Surface Science and Nanotechnology, 2009
- Surface‐Dominated Transport Properties of Silicon NanowiresAdvanced Functional Materials, 2008
- Surface Plasmon Resonance Enhanced Transmission of Light through Gold-Coated Diffraction GratingsAnalytical Chemistry, 2008
- Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstructionJournal of Crystal Growth, 2007
- Solution-processed PbS quantum dot infrared photodetectors and photovoltaicsNature Materials, 2005
- Growth of nanowire superlattice structures for nanoscale photonics and electronicsNature, 2002
- Silicon-based optoelectronicsProceedings of the IEEE, 1993