Threshold MnAs thickness for the formation of ordered α/β stripes in MnAs/GaAs(001)
- 24 June 2020
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 53 (26), 265005
- https://doi.org/10.1088/1361-6463/ab82da
Abstract
Manganese arsenide layers epitaxially grown on GaAs(001) are known to feature a temperature dependent self-assembled microstructure of ordered stripes, alternating the ferromagnetic alpha and paramagnetic beta phases. The surface dipolar fields generated by the alpha/beta stripes have been used for achieving temperature controlled magnetization switching of a ferromagnetic overlayer. For this kind of application, it is advantageous to minimize the MnAs layer thickness. In this work we investigate, using x-ray scattering techniques, the presence of the ordered microstructure as a function of the MnAs layer thickness and we identify a minimum value of similar to 40 nm for the formation of ordered alpha/beta stripes in MnAs/GaAs(001). These results have an impact for envisaging magnetization-switching applications that rely on the control of the temperature-or laser-driven surface dipolar fields in MnAs-based devices.Funding Information
- Horizon 2020 Framework Programme (730872)
- National Natural Science Foundation of China (U1632264)
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