Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices
- 4 July 2021
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 33 (32), 2102435
- https://doi.org/10.1002/adma.202102435
Abstract
Synaptic devices based on 2D-layered materials have emerged as high-efficiency electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices have the advantages of multiple functionalities by responding to diverse stimuli, but they consume large amounts of energy, far more than the human brain. Moreover, current lateral devices employ several mechanisms based on conductive filaments and grain boundaries (GBs), but their formation is random and difficult to control, also hindering their practical applications. Here, four-terminal, lateral synaptic devices with artificially engineered GBs are reported, which are made from monolayer MoS2. With lithography-free, direct-laser-writing-controlled MoS2/MoS2−xOδ GBs, such synaptic devices exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously. This enables detailed simulations of biological learning and cognitive processes as well as image perception and processing. In particular, the device exhibits low energy consumption, similar to that of the human brain and much lower than those of other lateral 2D synaptic devices. This work provides an effective way to fabricate lateral synaptic devices for practical application development and sheds light on controllable electrical state switching for neuromorphic computing.Keywords
Funding Information
- National Natural Science Foundation of China (51788104)
- National Basic Research Program of China (2018YFA0208401)
- National Natural Science Foundation of China (51972193, 11774191)
This publication has 55 references indexed in Scilit:
- Atom-by-atom structural and chemical analysis by annular dark-field electron microscopyNature, 2010
- Resistive switching in transition metal oxidesMaterials Today, 2008
- The missing memristor foundNature, 2008
- Write Current Reduction in Transition Metal Oxide Based Resistance Change MemoryAdvanced Materials, 2008
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- Role of Oxygen Vacancies in Cr‐Doped SrTiO3 for Resistance‐Change MemoryAdvanced Materials, 2007
- The Wickelgren Power Law and the Ebbinghaus Savings FunctionPsychological Science, 2007
- A VLSI Array of Low-Power Spiking Neurons and Bistable Synapses With Spike-Timing Dependent PlasticityIEEE Transactions on Neural Networks, 2006
- Band diagram and carrier conduction mechanisms in ZrO/sub 2/ MIS structuresIEEE Transactions on Electron Devices, 2004
- Neuronal Plasticity: Increasing the Gain in PainScience, 2000