Surface Recombination Concept as Applied to Determinate Silicon Solar Cell Base Optimum Thickness with Doping Level Effect
Open Access
- 1 January 2019
- journal article
- research article
- Published by Scientific Research Publishing, Inc. in World Journal of Condensed Matter Physics
- Vol. 09 (04), 102-111
- https://doi.org/10.4236/wjcmp.2019.94008
Abstract
New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.Keywords
This publication has 1 reference indexed in Scilit:
- Optimisation of p+ doping level of n+-p-p+ bifacial b.s.f. solar cells by ion implantationElectronics Letters, 1980