Manipulating Charge and Energy Transfer between 2D Atomic Layers via Heterostructure Engineering
- 16 June 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 20 (7), 5359-5366
- https://doi.org/10.1021/acs.nanolett.0c01722
Abstract
Two-dimensional (2D) van der Waals heterostructures have attracted enormous research interests due to their emergent electrical and optical properties. The comprehensive understanding and efficient control of interlayer couplings in such devices are crucial for realizing their functionalities, as well as for improving their performance. Here, we report a successful manipulation of interlayer charge transfer between 2D materials by varying different stacking layers consisting of graphene, hexagonal boron nitride, and tungsten disulfide. Under visible-light excitation, despite being separated by few-layer boron nitride, the graphene and tungsten disulfide exhibit clear modulation of their doping level, i.e., a change of the Fermi level in graphene as large as 120 meV and a net electron accumulation in WS2. By using a combination of micro-Raman and photoluminescence spectroscopy, we demonstrate that the modulation is originated from simultaneous manipulation of charge and/or energy transfer between each of the two adjacent layers.Funding Information
- Agence Nationale de la Recherche (NRF2017-NRF-ANR005 2DCHIRAL)
- Ministry of Education, Culture, Sports, Science and Technology (JPMXP0112101001)
- Ministry of Education - Singapore (MOE2017-T2-1-040, MOE2018-T3-1-002, RG 194/17)
- China Postdoctoral Science Foundation (2017M622764)
- Core Research for Evolutional Science and Technology (JPMJCR15F3)
- National Research Foundation Singapore (NRF-CRP-21-2018-0007, NRF2017-NRF-ANR005 2DCHIRAL)
- Japan Society for the Promotion of Science (JP20H00354)
- National Natural Science Foundation of China (61435010, 61905156)
This publication has 45 references indexed in Scilit:
- Electrical control of neutral and charged excitons in a monolayer semiconductorNature Communications, 2013
- Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D CrystalsACS Nano, 2013
- Symmetry-dependent phonon renormalization in monolayer MoStransistorPhysical Review B, 2012
- Field-Effect Tunneling Transistor Based on Vertical Graphene HeterostructuresScience, 2012
- Optical separation of mechanical strain from charge doping in grapheneNature Communications, 2012
- Breakdown of the adiabatic Born–Oppenheimer approximation in grapheneNature Materials, 2007
- Nonadiabatic Kohn Anomaly in a Doped Graphene MonolayerPhysical Review Letters, 2006
- Raman Spectrum of Graphene and Graphene LayersPhysical Review Letters, 2006
- Kramers-Kronig analysis of the reflectivity spectra of 3R-WS2and 2H-WSe2Journal of Physics C: Solid State Physics, 1976
- Zwischenmolekulare Energiewanderung und FluoreszenzAnnalen der Physik, 1948