Fast growth of large-grain and continuous MoS2 films through a self-capping vapor-liquid-solid method
Open Access
- 23 July 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nature Communications
- Vol. 11 (1), 1-9
- https://doi.org/10.1038/s41467-020-17517-6
Abstract
Most chemical vapor deposition methods for transition metal dichalcogenides use an extremely small amount of precursor to render large single-crystal flakes, which usually causes low coverage of the materials on the substrate. In this study, a self-capping vapor-liquid-solid reaction is proposed to fabricate large-grain, continuous MoS2 films. An intermediate liquid phase-Na2Mo2O7 is formed through a eutectic reaction of MoO3 and NaF, followed by being sulfurized into MoS2. The as-formed MoS2 seeds function as a capping layer that reduces the nucleation density and promotes lateral growth. By tuning the driving force of the reaction, large mono/bilayer (1.1 mm/200 μm) flakes or full-coverage films (with a record-high average grain size of 450 μm) can be grown on centimeter-scale substrates. The field-effect transistors fabricated from the full-coverage films show high mobility (33 and 49 cm2 V−1 s−1 for the mono and bilayer regions) and on/off ratio (1 ~ 5 × 108) across a 1.5 cm × 1.5 cm region.Funding Information
- Ministry of Science and Technology, Taiwan (107-2119-M-007-011-MY2)
This publication has 54 references indexed in Scilit:
- Mobility engineering and a metal–insulator transition in monolayer MoS2Nature Materials, 2013
- Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2Nano Letters, 2012
- Channel Length Scaling of MoS2 MOSFETsACS Nano, 2012
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped ContactsNano Letters, 2012
- From Bulk to Monolayer MoS2: Evolution of Raman ScatteringAdvanced Functional Materials, 2012
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Emerging Photoluminescence in Monolayer MoS2Nano Letters, 2010
- Historical overview of silicon crystal pulling developmentMaterials Science and Engineering B, 2000
- Czochralski growth of siliconJournal of Crystal Growth, 1983
- Ioffe-Regel criterion and resistivity of metalsPhysical Review B, 1981