Band Structure and Quantum Phase Transition of Graphene/h-BN Heterojunction under Local Potential Control
- 1 January 2022
- journal article
- Published by Hans Publishers in Advances in Condensed Matter Physics
- Vol. 11 (03), 57-64
- https://doi.org/10.12677/cmp.2022.113007
Abstract
The band structure and quantum phase transition of graphene/hexagonal boron nitride heterojunction (h-BN) under local potentials are studied by the tight-binding method. The result shows that the graphene layer is in the quantum spin Hall state and the h-BN layer is in the insulating state when the intrinsic spin-orbit coupling strength of the graphene layer is given. As the local potential of the graphene layer increases, the system will change from a quantum spin Hall state to a semiconductor state. New gapless edge states can be generated by tuning the local potential of the h-BN layer, so that the quantum spin Hall state of the graphene layer becomes the quantum spin Hall state composed of the edge states within and between layers.Keywords
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