Effects of Resistance States on the Magnetoresistance in Ni/Al2O3/Ni by Resistive Switching
- 1 July 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Superconductivity and Novel Magnetism
- Vol. 33 (7), 1905-1909
- https://doi.org/10.1007/s10948-020-05472-8
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (51971109, 51471085, 51771053)
- the national key Research and Development Program of China (2016YFA0300803)
This publication has 24 references indexed in Scilit:
- Resistive switching in FeNi/Al2O3/NiO/Pt structure with various Al2O3 layer thicknessesJournal of Magnetism and Magnetic Materials, 2019
- Conductive filaments controlled ferromagnetism in Co-doped ZnO resistive switching memory deviceJapanese Journal of Applied Physics, 2019
- Coexistence of unipolar and bipolar switching in nanocrystalline spinel ferrite ZnFe2O4 thin films synthesized by sol-gel methodApplied Physics Letters, 2018
- Enhanced resistive switching and magnetic properties of Gd-doped NiFe2O4 thin films prepared by chemical solution deposition methodMaterials Science and Engineering B, 2018
- Reversible voltage dependent transition of abnormal and normal bipolar resistive switchingScientific Reports, 2016
- Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memoryApplied Physics Letters, 2014
- Forming-free bipolar resistive switching in nonstoichiometric ceria filmsNanoscale Research Letters, 2014
- Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applicationsApplied Physics Letters, 2012
- $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET CurrentIEEE Electron Device Letters, 2010
- Write Current Reduction in Transition Metal Oxide Based Resistance Change MemoryAdvanced Materials, 2008