This paper reports synthesis procedure for few-layer graphene (FLG) on silicon carbide (SiC) at relatively lower temperature (300 °C), as compared to the temperature for graphene synthesis on non-metal surfaces reported to date, using microwave plasma chemical vapor deposition. The results demonstrate that 3 to 4 layer graphene films can be produced within two minutes on a SiC substrate. The graphene domain size and coverage are observed to depend on the terminal element of the SiC surface. Electrical characterization reveals that the films contain structural defects. Room temperature mobility of 75 cm2 V–1 s–1 and carrier density of 4.8 × 1016 cm–2 were found on the Si-terminated face. The carrier concentration was lower (1.2 × 1013 cm–2) for the FLG grown on the C-terminated surface. FLG thus grown exhibits p-type behavior. The presented plasma assisted direct growth of graphene on SiC at low temperatures is attractive for high-throughput graphene production.