Near-infrared broadband Si:H/SiO2 multilayer gratings with high tolerance to fabrication errors
- 7 April 2020
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 31 (31), 315203
- https://doi.org/10.1088/1361-6528/ab8768
Abstract
Si:H and TiO2 multilayer dielectric gratings (MDGs) were studied comparatively to highlight the influence of refractive indices on fabrication tolerances, including tolerances for grating width errors and cross-sectional shape errors. The fabrication tolerance of Si:H MDGs is from 2 to 4 times greater than that of TiO2 MDGs, because the higher refractive index of Si:H has stronger ability to restrain electric fields. It was further revealed in these studies that a Si:H MDG with positive trapezoidal errors has minor influence on high diffraction efficiency bandwidth. Finally, a Si:H MDG was prepared without iterative corrections. Although large fabrication errors of grating width and cross-sectional shape existed, it still had a 146 nm bandwidth with diffraction efficiency over 97%, which verifies the robustness of the proposed Si:H MDG.Keywords
Funding Information
- Major projects of Science and Technology Commission of Shanghai (No. 17JC1400800)
- The National Natural Science Foundation of China (Nos. 61522506)
- the “Shu Guang” project supported by Shanghai Municipal Education Commission and Shanghai Education (No. 17SG22)
- The National Program on Key Research Project (No. 2016YFA0200900)
- Joint Sino-German Research Project (No. GZ1275)
- the Fundamental Research Funds for the Central Universities, China
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