Demonstration and aging test of a radiation resistant strontium-90 betavoltaic mechanism
- 13 April 2020
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 116 (15), 153901
- https://doi.org/10.1063/1.5140780
Abstract
In this work, a betavoltaic combined with photovoltaic mechanism using strontium-90 as a radioactive source was built up. A transparent yttrium aluminum garnet ceramic doped with a cerium ion is used as an intermediate conversion layer to avoid direct irradiation to a semiconductor conversion device and translates most of the high energy beta particles into photons. The traditional crystalline silicon conversion device with an N+PP+ junction structure functions as a betavoltaic and photovoltaic conversion device simultaneously. Radiation resistance is demonstrated by a 0.9 MeV electron beam irradiation aging experiment. In the optimized betavoltaic setup with a 0.5 mm transparent yttrium aluminum garnet ceramic, the crystalline silicon conversion device can bear 5 × 1015 e/cm2 by degrading output power less than 15%. Loaded with 1.3 mCi strontium-90, this betavoltaic setup produces a short circuit current of 282 nA, an open circuit voltage of 0.168 V, a fill factor of 0.58, and a total conversion efficiency of 0.32%.Keywords
Funding Information
- National Natural Science Foundation of China (11605167)
- National Natural Science Foundation of China (11575161)
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