Surface recombination velocity on wet-cleaned silicon wafers using heterodyne lock-in ca rrierography imaging: measurement uniqueness investigation
- 1 May 2020
- journal article
- research article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 35 (5), 055013
- https://doi.org/10.1088/1361-6641/ab7844
Abstract
Characterization of semiconductor surface quality is important for evaluating the surface preparation methods. In this work, three wet-cleaned silicon wafers with different surface conditions were inspected using heterodyne lock-in carrierography (HeLIC) imaging simultaneously with homodyne photocarrier radiometry (HoPCR). The surface recombination velocity was measured at various queue times after the wet-clean treatment using HeLIC and was found to be consistent with values obtained using HoPCR. The results show that HeLIC can provide a reliable quantitative imaging tool for evaluating the surface conditions of wet-cleaned silicon wafers.Keywords
Funding Information
- the Program of Introducing Talents of Discipline of Universities (B07108)
- the Foundation for Innovative Research Groups of the National Nature Science Foundation of China (51521003)
- the Natural Science Foundation of China (61571153)
- the Natural Sciences and Engineering Research Council of Canada (NSERC) for a Discovery grant
- the Canada research chairs program
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