Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors
- 29 December 2020
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 60 (SB), SBBH01
- https://doi.org/10.35848/1347-4065/abd2a0
Abstract
We investigate the humidity sensing performance and mechanism of few-layer-thick rhenium disulfide (ReS2) field-effect transistors (FETs) under gate bias operation. Consequently, a negative gate bias exhibits the sensor response, exceeding 90% mainly in the low relative humidity (RH) range. Meanwhile, the threshold voltage change was discovered to be a superior sensing parameter to achieve a broad monitoring of RH range with high response and sensitivity. The approach obtained a practical sensitivity of 0.4 V per 1% RH, which exceed a majority of previous studies with the pristine 2D materials. Besides, our devices display reversible adsorption–desorption and long-term stability operations even after a one-month period. This suggests the sensor capacity to function in real-time applications with a short response and recovery times. These outcomes offer support in the development of adaptable tunable humidity sensors based on ReS2 FETs.Keywords
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