Charge-Plasma Based Cylindrical Nanowire FET for Low-Noise and High Sensing

Abstract

A dopingless Cylindrical Nanowire Field Effect Transistor is proposed by implementing the charge plasma technique. The charge plasma technique helped in the necessary doping of the source/drain regions. The significance of using charge plasma based Nanowire FET for low-noise and higher sensing applications is investigated by analyzing the linearity parameters and compared with the Junctionless Nanowire FET. The proposed device is optimized as per the practical conditions by taking the interface trap charges into account. The interface trap charges are considered at the gate oxide-channel interface. The variation of interface trap charge (ITCs) density varies the device performance depending on the ITC polarity. The presence of ITCs can enhance device performance by tweaking the ITCs amplitude with positive polarity. The work function of the source/drain metal for the charge plasma technique is varied to get an optimized value. The higher value of source/drain metal degrades the device performance. The voltage interception point of the proposed device is greater than 5 times the actual value of the input signal. The drain current decreases drastically with the increase of source/drain work function independent of the gate bias.