Decoupling Radiative and Auger Processes in Semiconductor Nanocrystals by Shape Engineering

Abstract

One of the most challenging aspects of semiconductor nanotechnology is the presence of extremely efficient nonradiative decay pathways (known as Auger processes) that hinder any attempt at creating population inversion and obtaining gain in nanocrystals. What is even more frustrating is that, in most cases, the strategies adopted to slow down Auger in these nanostructures also lead to a comparable increase in the radiative recombination times, so that there is no overall improvement from the point of view of their applicability as emissive media. Here we present a comprehensive theoretical characterization of CdTe tetrapods and show that in these versatile nanostructures it is possible to achieve a complete decoupling between radiative and Auger processes, where the latter can be strongly suppressed compared to spherical structures, by careful shape engineering, without affecting the efficiency of radiative recombination.