Controlled hydrogenation into defective interlayer bismuth oxychloride via vacancy engineering
Open Access
- 5 June 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Communications Chemistry
- Vol. 3 (1), 1-8
- https://doi.org/10.1038/s42004-020-0319-9
Abstract
Hydrogenation is an effective approach to improve the performance of photocatalysts within defect engineering methods. The mechanism of hydrogenation and synergetic effects between hydrogen atoms and local electronic structures, however, remain unclear due to the limits of available photocatalytic systems and technical barriers to observation and measurement. Here, we utilize oxygen vacancies as residential sites to host hydrogen atoms in a layered bismuth oxychloride material containing defects. It is confirmed theoretically and experimentally that the hydrogen atoms interact with the vacancies and surrounding atoms, which promotes the separati30on and transfer processes of photo-generated carriers via the resulting band structure. The efficiency of catalytic activity and selectivity of defective bismuth oxychloride regarding nitric oxide oxidation has been improved. This work clearly reveals the role of hydrogen atoms in defective crystalline materials and provides a promising way to design catalytic materials with controllable defect engineering.Keywords
This publication has 43 references indexed in Scilit:
- Activating the Microscale Edge Effect in a Hierarchical Surface for Frosting Suppression and Defrosting PromotionScientific Reports, 2013
- Properties of Disorder-Engineered Black Titanium Dioxide Nanoparticles through HydrogenationScientific Reports, 2013
- Hydrogenated cation vacancies in semiconducting oxidesJournal of Physics: Condensed Matter, 2011
- Hydrogen-Treated TiO2 Nanowire Arrays for Photoelectrochemical Water SplittingNano Letters, 2011
- Negatively charged hydrogen at oxygen-vacancy sites in BaTiO3: Density-functional calculationJournal of Applied Physics, 2010
- Hydrogen multicentre bondsNature Materials, 2006
- HYDROGEN IN SEMICONDUCTORSAnnual Review of Materials Research, 2006
- The effect of calcination temperature on the adsorption of nitric oxide on Au-TiO2: Drifts studiesApplied Catalysis A: General, 2005
- Physics and chemistry of hydrogen in the vacancies of semiconductorsPhysical Review B, 2003
- Species formed after NO adsorption and NO + O2 co-adsorption on TiO2: an FTIR spectroscopic studyPhysical Chemistry Chemical Physics, 2000