Storage Mechanisms of Polyimide‐Molybdenum Disulfide Quantum Dot Based, Highly Stable, Write‐Once‐Read‐Many‐Times Memristive Devices
- 30 November 2020
- journal article
- research article
- Published by Wiley in Advanced Electronic Materials
- Vol. 7 (1)
- https://doi.org/10.1002/aelm.202000593
Abstract
No abstract availableKeywords
Funding Information
- National Research Foundation of Korea
- Ministry of Education, Science and Technology (2019R1A2B5B03069968)
This publication has 44 references indexed in Scilit:
- Effect of the ZnS shell layer on the charge storage capabilities of organic bistable memory devices fabricated utilizing CuInS2–ZnS core–shell quantum dots embedded in a poly(methylmethacrylate) layerThin Solid Films, 2013
- Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devicesNature Communications, 2013
- Single‐Layer Semiconducting Nanosheets: High‐Yield Preparation and Device FabricationAngewandte Chemie, 2011
- Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device FabricationAngewandte Chemie-International Edition, 2010
- Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly(methyl methacrylate) Polymer LayerNano Letters, 2010
- Review of polymer materials with low dielectric constantPolymer International, 2010
- Nonvolatile Memory Elements Based on Organic MaterialsAdvanced Materials, 2007
- Polymer GelsJournal of Macromolecular Science, Part C: Polymer Reviews, 2004
- Electronic injection and conduction processes for polymer devicesJournal of Polymer Science Part B: Polymer Physics, 2003
- New Preparation Methods for Organic–Inorganic Polymer HybridsMRS Bulletin, 2001