Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
Open Access
- 12 September 2021
- journal article
- research article
- Published by Wiley in Advanced Electronic Materials
- Vol. 8 (1), 2100420
- https://doi.org/10.1002/aelm.202100420
Abstract
No abstract availableKeywords
Funding Information
- Generalitat de Catalunya (2017 SGR 1377)
This publication has 29 references indexed in Scilit:
- Why Is FE–HfO2More Suitable Than PZT or SBT for Scaled Nonvolatile 1-T Memory Cell? A Retention PerspectiveIEEE Electron Device Letters, 2016
- Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric CapacitorsAdvanced Functional Materials, 2016
- Pathways towards ferroelectricity in hafniaPhysical Review B, 2014
- Nanoscale Observation of Time‐Dependent Domain Wall Pinning as the Origin of Polarization FatigueAdvanced Functional Materials, 2012
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011
- Polarization fatigue in ferroelectric thin films and related materialsJournal of Applied Physics, 2009
- Dual-frequency resonance-tracking atomic force microscopyNanotechnology, 2007
- Polarization Switching Dynamics Governed by the Thermodynamic Nucleation Process in Ultrathin Ferroelectric FilmsPhysical Review Letters, 2006
- Physics of thin-film ferroelectric oxidesReviews of Modern Physics, 2005
- Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic featuresJournal of Applied Physics, 2001