Experimental investigation on the performance degradations of the GaN class-F power amplifier under humidity conditions
- 25 February 2021
- journal article
- research article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 36 (3), 035025
- https://doi.org/10.1088/1361-6641/abe65c
Abstract
To investigate the humidity dependency of the specifications for a GaN class-F power amplifier (PA), humidity experiments are conducted in the Vötsch Industrietechnik SC3 1000 MHG environmental test chamber. The experimental results show that the key specifications of the PA, such as the output power and power-added efficiency, the large-signal gain, and the drain current show degradation as humidity increases. The reason for this degradation may be the reduction of the 2DEG mobility density due to surface degradation at AlGaN recess regions caused by diffusion phenomena of Ga, and Al. The results concluded here would be helpful for the PA designers to understand the humidity effects on the key specifications for the GaN class-F PA comprehensively, so that the designers could consider the effects on the design cycle of the compensation circuits in advance.Keywords
Funding Information
- National Key R&D Program of China (2016YFA0202200)
This publication has 30 references indexed in Scilit:
- An X-Band Switchless Bidirectional GaN MMIC Amplifier for Phased Array SystemsIEEE Microwave and Wireless Components Letters, 2014
- Power MOSFET failure and degradation mechanisms in flyback topology under high temperature and high humidity conditionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- Evaluation of temperature dependence and lifetime of 79GHz power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- Humidity resistance of GaAs ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Degradation mechanisms of GaAs PHEMTs in high humidity conditionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Evaluation of moisture induced hot-carrier degradation of N- and P-MOSFETs using steam stressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Temperature-humidity-bias behavior and acceleration factors for nonhermetic uncooled InP-based lasersJournal of Lightwave Technology, 1997
- Temperature-humidity-bias-behavior and acceleration model for InP planar PIN photodiodesJournal of Lightwave Technology, 1996
- Reliability Evaluation of Aluminum-Metallized MOS Dynamic RAM's in Plastic Packages in High Humidity and Temperature EnvironmentsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1981