Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency
- 14 May 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (20), 203515
- https://doi.org/10.1063/1.2741052
Abstract
Enhancement of light extraction from an integrated ZnO nanotips/GaN light emitting diode(LED) is demonstrated. The device is composed of a GaNLED with a Ga-doped ZnO (GZO) transparent conductive layer and ZnO nanotips grown on GZO for light extraction. The light output power of a ZnO nanotips/GZO/GaN LED exhibits 1.7 times enhancement, in comparison with a conventional Ni ∕ Au p -metal LED. The higher emission efficiency is attributed to the enhanced light transmission and scattering in the Zn O ∕ Ga N multilayer.This publication has 15 references indexed in Scilit:
- Enhanced coupling of light from organic light emitting diodes using nanoporous filmsJournal of Applied Physics, 2004
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface rougheningApplied Physics Letters, 2004
- III-nitride blue and ultraviolet photonic crystal light emitting diodesApplied Physics Letters, 2004
- Selective MOCVD growth of ZnO nanotipsIEEE Transactions on Nanotechnology, 2003
- Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorodsApplied Physics Letters, 2002
- Impact of texture-enhanced transmission on high-efficiency surface-textured light-emitting diodesApplied Physics Letters, 2001
- Increased Efficiency and Controlled Light Output from a Microstructured Light-Emitting DiodeAdvanced Materials, 2001
- Electromagnetic crystals for surface plasmon polaritons and the extraction of light from emissive devicesJournal of Lightwave Technology, 1999
- 30% external quantum efficiency from surface textured, thin-film light-emitting diodesApplied Physics Letters, 1993
- Resonant cavity light-emitting diodeApplied Physics Letters, 1992