Doping isolated one-dimensional antiferromagnetic semiconductor vanadium tetrasulfide (VS4) nanowires with carriers induces half-metallicity
- 5 February 2021
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 9 (9), 3122-3128
- https://doi.org/10.1039/d1tc00096a
Abstract
Doping isolated one-dimensional antiferromagnetic semiconductor VS4 nanowires with carriers induces half-metallicity.Funding Information
- Grantová Agentura, Univerzita Karlova (792218)
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