Temperature-Dependence of Debye-Waller Factors of Semiconductors Presented in Terms of Cumulant Expansion

Abstract

This work studies temperature-dependence of Debye-Waller factors of semiconductors presented in terms of cumulant expansion in extended X-ray absorption fine structure (EXAFS). The advances in these studies are succeeded based on further development of the anharmonic correlated Einstein model derived primary for fcc crystals into the one for applying to semiconductors and for creating a method having the advantage that all considered quantities are provided based on only the calculation or measurement of second cumulants. Analytical expressions of three first EXAFS cumulants have been derived.